工业科学医疗

峰值功率10W到4000W;工作频率400KHz到2.5GHz;基于自主知识产权的28V,50V ,65V和500V LDMOS工艺平台开发,全国产供应;同时拥有28V和50V GaN器件;封装材料自主开发设计,具有低成本、高可靠性。

  • Min. Freq.(MHz)
    600
    1.8
    100
    470
  • Max. Freq.(MHz)
    1600
    600
    1400
    700
    200
  • VDD(V)
    28
    50
  • Psat(W)
    200
    150
    400
    550
    600
    1000
    1400
    30
    350
    800
    900
  • DE@Pavg
    59
    67.9
    56
    64
    60
    63
    70
    61
    65
  • Gain(dB)
    19.7
    23.3
    21.5
    20.8
    20
    24.6
    22
    16.5
    27
    18
    25
  • Test Freq.(MHz)
    CW@1350
    CW@450
    Pulse@860
    Pulse@435
    Pulse@600
    Pulse@1200
    Pulse@100
    Pulse@160
    CW@60
    CW@160
  • Status
    MP
    Q4/2022
  • Package
    ACC2110S-4L
    H0906
    ACC3210S-4L
    ACC2110B-4L
  • Process
    LDMOS

显示6种产品

产品型号
Min. Freq.(MHz)
Max. Freq.(MHz)
VDD(V)
Psat(W)
DE@Pavg
Gain(dB)
Test Freq.(MHz)
Status
Package
Process
HT647P(B) 6001600282005919.7CW@1350MPACC2110S-4L/ACC2110B-4LLDMOS
HT647PL(B) 1.86002820067.923.3CW@450MPACC2110S-4L/ACC2110B-4LLDMOS
HTN7G09P200H(B) 1.81000282006521CW@860MPACC2110S-4L/ACC2110B-4LLDMOS
HTN7G09P200S 1.81000282006521CW@860MPACC2110S-4LLDMOS
HTH7G06P300H(B) 1.8600504006420.8Pulse@435MPACC2110S-4L/ACC2110B-4LLDMOS
HTH8G07P400H(B) 1.87005040056.8821.78Pulse@600MPACC2110S-4L/ACC2110B-4LLDMOS
HTH8G02P550H(B) 1.8200505507025Pulse@100MPACC2110S-4L/ACC2110B-4LLDMOS
HTH8G02P550S(B) 1.8200505507025Pulse@100MPACC2110S-4L/ACC2110B-4LLDMOS
HTH9G09P551S 300900505506019CW@628MPACC2110S-4LLDMOS
HTH8G07P600H(B) 470700506006322Pulse@600MPACC2110S-4L/ACC2110B-4LLDMOS
HTH8G02P800H(B) 1.8200508006520Pulse@160MPACC2110S-4L/ACC2110B-4LLDMOS
HTH7G14S030H(B) 1.8140050306112Pulse@1200MPACC0906S-2L/ACC0906B-2LLDMOS
HT20340S 10300504007225CW@40.68MPTO247LDMOS
HTN7G38S007P 70038002871919CW@2110MPPDFN5*5LDMOS
HTN9G49S007P 4800490025744.515.5CW@4850MPDFN5*5LDMOS
HTN7G21S040P 700210028406621CW@920MPTO-270LDMOS
HTN7G09S060P 70096028606122CW@920MPTO-270LDMOS